The diffusion of implanted Sn in the  phase was studied, at 873 to 1073K, by using Rutherford back-scattering spectrometry. The results for samples with a lower impurity content showed that the diffusion coefficients obeyed:

D (cm2/s) = 4.0 x 101 exp[-3.5(eV)/kT]

The results for samples with a higher Fe content indicated that the diffusion mechanism was affected by the impurity concentration.

R.A.Pérez, M.Behar, F.Dyment: Philosophical Magazine A, 1997, 75[4], 993-1004