Bulk single crystals of 4H-type material were deformed in compression at low strain-rates, at temperatures ranging from 900 to 1360C. The microstructures were observed by means of transmission electron microscopy. The results of mechanical tests showed that the variation in the yield stress as a function of temperature was not monotonic, but decreased markedly above 1100C. It was observed that deformation involved leading Si(g) partials at temperatures below 1000C, total dislocations at temperatures above 1200C, and mixture of leading Si(g) partials and total dislocations at temperatures between 1050 and 1150C.

Deformation Tests on 4H-SiC Single Crystals between 900C and 1360C and the Microstructure of the Deformed Samples. J.L.Demenet, M.H.Hong, P.Pirouz: Materials Science Forum, 2000, 338-342, 517-20