Radioactive 54Mn was deposited onto the surface of Czochralski-type material which was doped with Zn, or n-type material which was doped with Sn. The samples were annealed in the presence of As at 950 to 1100C. The profiles were determined by measuring the γ activity. The results indicated that diffusion in p-type material was faster than in lightly-doped material. The results for p-type material, with a hole density of 1019/cm3, could be described by:

D (cm2/s) = 7.3 x 10-5 exp[-1.24(eV)/kT]

The results for p-type material with a hole density of 3.4 x 1019/cm3 could be described by:

D (cm2/s) = 3.2 x 10-4 exp[-1.24(eV)/kT]

The results for n-type material could be described by:

D (cm2/s) = 3.0 x 10-2 exp[-2.25(eV)/kT]

E.A.Skoryatina: Fizika i Tekhnika Poluprovodnikov, 1986, 20[10], 1877-80. (Soviet Physics - Semiconductors, 1986, 20[10], 1177-8)

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)