Capacitance-voltage methods were used to profile δ-doped layers which had been grown onto Si substrates via metalorganic chemical vapor deposition. It was found that there was a close correlation between dislocation densities in the epitaxial layers and the associated diffusion coefficients. After rapid thermal annealing (800 to 1000C, 7s), the diffusion data could be described by:

D (cm2/s) = 3.0 x 101 exp[-3.4(eV)/kT]

for a relatively thick buffer layer of 0.0033mm. It was concluded that the dislocation-enhanced diffusion of Si was marked, and that the inclusion of an 0.003mm buffer layer was insufficient to prevent the diffusion of impurities.

Y.Kim, M.S.Kim, S.K.Min, C.Lee: Journal of Applied Physics, 1991, 69[3], 1355-8

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)