The migration of atomic Si in δ-doped samples was studied by means of capacitance-voltage measurements and rapid thermal annealing. It was shown that these methods could detect diffusion which occurred at length-scales as small as 1nm. The capacitance-voltage profile widths broadened, from less than 4nm to 13.7nm, upon annealing (1000C, 5s). It was found that the results could be described by:

D (cm2/s) = 4.0 x 10-4 exp[-2.45(eV)/kT]

E.F.Schubert, T.H.Chiu, J.E.Cunningham, B.Tell, J.B.Stark: Journal of Electronic Materials, 1988, 17[6], 527-31. See also: Applied Physics Letters, 1988, 53[4], 293-5

The best linear fits to the solute diffusion data ([46] to [92]) yield:

Be: Ln[Do] = 0.40E – 26.7 (R2 = 0.75); Cd: Ln[Do] = 0.55E – 50 (R2 = 0.61);

Co: Ln[Do] = 0.12E – 3.8 (R2 = 0.06); Fe: Ln[Do] = 0.36E – 20.2 (R2 = 0.66)

Ga: Ln[Do] = 0.19E – 15.5 (R2 = 0.79); S: Ln[Do] = 0.46E – 29.9 (R2 = 0.99)

Si: Ln[Do] = 0.43E – 31.6 (R2 = 0.42); Zn: Ln[Do] = 0.52E – 29.9 (R2 = 0.90)