Concentration-versus-depth profiles were measured by using neutron activation analysis and serial sectioning. The Ag diffusion appeared to be very fast. Saturation was attained in the bulk of dislocation-free wafers after short periods of annealing. It was concluded that interstitial Ag was the predominant configuration in Si without dislocations. Equilibrium Ag concentrations were determined for 1287 to 1598K. Much higher Ag concentrations were found in dislocated Si, and they varied irregularly with penetration depth. The interstitial Ag diffusivity was deduced to be described by:

D (cm2/s) = 6.0 x 10-1 exp[-1.15(eV)/kT]

F.Rollert, N.A.Stolwijk, H.Mehrer: Journal of Physics D, 1987, 20[9], 1148-55