A source in the form of 46Sc-labelled chloride was deposited onto Si plate samples to a depth of about 0.35mm. Diffusion annealing (1100 to 1250C, 5 to 30h, air) was carried out, and the resultant Sc profile was determined by using etching and γ-ray counting. The diffusion coefficient was deduced by fitting the profile to the complementary error function. The results could be described by:

D (cm2/s) = 8.0 x 10-2 exp[-3.2(eV)/kT]

G.K.Azimov, S.Zainabidinov, D.E.Nazyrov: Fizika i Tekhnika Poluprovodnikov, 1989, 23[3], 556-7. (Soviet Physics - Semiconductors, 1989, 23[3], 347)