The first direct experimental correlation between the presence of closed-core screw dislocations in 6H-type epilayers with recombination centres, and some of the small growth pits on the epilayer surface in lightly-doped Schottky diodes, was demonstrated. At every synchrotron white-beam X-ray topographically-identified closed-core screw dislocation, the electron beam-induced contrast image revealed a dark spot which indicated a recombination centre. Nomarski optical microscopy and atomic-force microscopy images revealed a corresponding small growth pit, with a sharp apex on the surface of the epilayer.

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes. C.M.Schnabel, M.Tabib-Azar, P.G.Neudeck, S.G.Bailey, H.B.Su, M.Dudley, R.P.Raffaelle: Materials Science Forum, 2000, 338-342, 489-92