A model for the development of stresses during electromigration was presented. This provided a method for calculating all of the components of the stress tensor, and clearly coupled vacancy transport and stress evolution to the boundary conditions that were applied to the metal. Analytical solutions were considered for electromigration normal to, and parallel to, a plate. The plate-parallel solution was used to reinterpret published X-ray micro-diffraction data. It was found that that the effective charge for vacancies in pure polycrystalline Al at 533K was about 0.84. Upon using parameters that were either measured, or calculated using the embedded atom method, the model yielded good agreement with both transient electromigration data and drift data.

General Model for Mechanical Stress Evolution during Electromigration. M.E.Sarychev, J.V.Zhitnikov, L.Borucki, C.L.Liu, T.M.Makhviladze: Journal of Applied Physics, 1999, 86[6], 3068-75