The V4+ (3d1) centre in 4H-type material was investigated by using photoluminescence and photoluminescence excitation techniques. The energy position of the ground state of the defect was determined to be 2.1eV below the conduction band for both the hexagonal and quasi-cubic sites. A broad peak in the photoluminescence excitation spectrum was tentatively attributed to the excited A1 state, which had previously been believed to be located in the conduction band.

Vanadium-Related Center in 4H Silicon Carbide B.Magnusson, M.Wagner, N.T.Son, E.Janzén: Materials Science Forum, 2000, 338-342, 631-4