The electron paramagnetic resonance of Al-doped 6H-type material was investigated. The resonance signals which were attributed to AlSi were found to decrease sharply with temperature, between 3.4 and 6.0K. The g-map of AlSi was observed to vary with [Al]. Additional resonance signals were found which increased with the Al doping level. The temperature- and saturation-dependences of these signals differed from those of the neutral AlSi centre. A resonance with g|| = 2.08 was detected below 38K, while the AlSi signal was observed below 7K.

Paramagnetic Centers in Al-Doped 6H-SiC - Temperature and Concentration Effects G.J.Gerardi, E.H.Poindexter, D.J.Keeble: Journal of Applied Physics, 2000, 87[4], 1914-20