The process of interdiffusion in thin-film multi-layers was studied, at temperatures ranging from 393 to 493K, by means of Auger electron spectroscopy and Ar-ion sputtering. The changes in Auger depth profiles that were caused by heating were converted into compositional changes in the diffusing species. The diffusion coefficients were deduced from the distributions of Pd and Cu in the Pd/Cu multi-layer structures.

AES Studies of Interdiffusion in Thin-Film Copper-Palladium Multilayer Structures. A.Bukaluk: Vacuum, 1999, 54[1-4], 279-83