Thermally (figure 7) and radiation-enhanced diffusion (figure 8) in thin films of the order-disorder alloy, above and below the transition temperature, was analyzed. It was demonstrated that thin films, grown using molecular beam epitaxy, were uniquely suited for such experiments because the surface provided a predominant and well-characterized sink for migrating defects. The analysis was applied to recent experiments, and quantitative predictions of radiation-enhanced diffusion agreed closely with experimental values. An analysis of tracer-impurity thermal diffusion experiments provided host diffusion coefficients over a temperature range around the transition temperature.

Thermal and Radiation-Enhanced Diffusion in Cu3Au. Y.S.Lee, C.P.Flynn, R.S.Averback: Physical Review B, 1999, 60[2], 881-9

Figure 7

Tracer Diffusivity of Ni (open circles) and Pd (filled circles) in Cu3Au

Figure 8

Radiation-Enhanced Diffusivity of Ni (a) and Pd (b) in Cu3Au