The production efficiency of freely migrating vacancy defects in irradiated samples was studied by making resistivity measurements of radiation-induced ordering in highly perfect monocrystalline films. The relative efficiencies of He, Ne and Ar bombardment, using various ion energies and specimen temperatures, were deduced. The ratio of the efficiency of 0.6MeV Ne, to that of He, increased with temperature: from about 0.25 at 340K to a saturation value of about 0.40 at 520K. In the case of Ar and He, the ratio increased from about 0.11 at 360K to about 0.18 at 540K. Estimates indicated that about half of all of the defects which were created in cascades were freely migrating ones.

Freely Migrating Defects in Ion-Irradiated Cu3Au. L.C.Wei, E.Lang, C.P.Flynn, R.S.Averback: Applied Physics Letters, 1999, 75[6], 805-7