The retention and thermal release of D, which had been implanted into W specimens which had various C contents, was studied by using ion beam analysis techniques. The correlation between implantation-induced defects, and D-trapping, was compared with the same correlation in Mo. The D concentration in the near-surface layer of W crystals was higher than that in Mo crystals during 10keV D2+ implantation at room temperature. In the case of D-implanted Mo crystals, isolated interstitial atoms were mainly identified by ion channelling. On the other hand, a large lattice distortion which was caused by extended defects was observed in the near-surface layer of D-implanted W at room temperature. This distortion did not appear above 390K. The appreciable content of retained D atoms was released from pure W at about 450K; at which temperature the lattice distortion was partly annealed out. The thermal release of D which was retained in C-containing W occurred abruptly at 350K; regardless of the C content.

Retention and Release of Deuterium Implanted in W and Mo. S.Nagata, K.Takahiro, S.Horiike, S.Yamaguchi: Journal of Nuclear Materials, 1999, 266-269, 1151-6