The tracer diffusion coefficient of T in the a-phase was measured, at temperatures ranging from 323 to 523K, by using the glow-discharge implantation method. The results were in good agreement with previously reported data. The trapping effect of Zr upon the diffusion of H isotopes was determined by using specimens which contained a small amount of Zr. The existence of at least 2 types of trapping site was deduced by analyzing the concentration dependence of the tracer diffusion coefficient for T. One type was due to Zr, and the other type was due to complexes of Zr with interstitial impurities such as O and N. Trapping energies of 0.15 and 0.36eV were assigned to the former and the latter, respectively.

Tracer Diffusion Coefficient of Tritium in Vanadium and Trapping Effect due to Zirconium Impurity. K.Fujii, K.Hashizume, Y.Hatano, M.Sugisaki: Journal of Alloys and Compounds, 1998, 270[1-2], 42-6