The surface structure of the reconstructed (00•1)Si face of 6H-type material was investigated by using high-resolution electron energy loss spectroscopy. The face exhibited the stable (v3 x v3)R30º reconstruction when it was annealed in a Si flux at temperatures greater than 900C. The high-resolution electron energy loss spectroscopic results confirmed that the adatom of the most stable v3 x v3 (00•1) surface was a Si atom with only 1 dangling bond. The v3 x v3 reconstruction therefore stabilized the (00•1)Si surface by compensating the dangling bonds of upper-surface Si atoms with additional 1/3-monolayer Si atoms.

High Resolution Electron Energy Loss Spectroscopy of v3 x v3 6H-SiC(0001) K.Takahashi, M.Uchida, M.Kitabatake: Materials Science Forum, 2000, 338-342, 357-60