A new kinetic electron-influenced model was proposed for the treatment of diffusion in this material. It was suggested that electron-based mechanisms could explain observed large variations in the activation energies and frequency factors, the so-called compensation effect, differences between low-temperature and high-temperature diffusion, and the exponential dependence of the diffusivity upon Cd content.

Y.L.Khait: Semiconductor Science and Technology, 1991, 6[12], C84-7