The surface structures of reconstructed 6H-type (00▪1)Si faces were investigated by using high-resolution electron energy loss spectroscopy. The faces exhibited the stable (v3 x v3)R30º reconstruction when they were annealed in a Si flux at temperatures greater than 900C. The high-resolution electron energy loss spectroscopy results verified that the adatom of the most stable (v3 x v3)R30º (00▪1) surface was a Si atom with only 1 dangling bond. Therefore, the v3 x v3 reconstruction stabilized the (00▪1)Si surface by compensating the dangling bonds of top-surface Si atoms with additional 1/3 monolayer Si atoms.

High Resolution Electron Energy Loss Spectroscopy of v3 x v3 6H-SiC (0001). K.Takahashi, M.Uchida, M.Kitabatake: Materials Science Forum, 2000, 338-342, 357-60