The donor-doping of IIIA elements, such as Ga and In, was used to grow Hg1-xCdxTe hetero-layers that consisted of a wide band-gap (x = 0.4) layer on top of a narrow band-gap layer. Both were grown onto (111)B CdTe substrates by liquid-phase epitaxy from a Te-rich solution. The segregation coefficients of Ga and In were decreasing functions of the dopant concentration in the growth solution. The diffusion coefficients of In and Ga, as deduced by fitting electron concentration profiles in In-doped and Ga-doped n-type layers, were between 10-13 and 10-12cm2/s and about 10-12cm2/s, respectively.

T.J.Yang, J.S.Chen, C.D.Chiang, T.B.Wu: Journal of Crystal Growth, 1995, 154[1-2], 34-40