Published data on Hg diffusion in Hg0.8Cd0.2Te were studied. It was noted that 2 component profiles were observed in most cases; with the profiles yielding differing diffusivities. Diffusion occurred via volume diffusion, followed by short-circuit diffusion. It was proposed that the fast component involved a vacancy mechanism at low Hg partial pressures, and an interstitial mechanism at high Hg partial pressures. In the case of Hg0.8Cd0.2Te, the reverse occurred with regard to the fast-diffusion component. The diffusivity was independent of the quality (etch-pit density) of the material.

M.U.Ahmed, E.D.Jones, J.B.Mullin, N.M.Stewart: Journal of Electronic Materials, 1996, 25[8], 1260-5