Studies were made of I diffusion into Hg0.8Cd0.2Te, at temperatures ranging from 20 to 600C. The concentration profiles were measured by using a radio-tracer sectioning technique. It was found that the profiles comprised 4 parts which could be satisfactorily fitted by using a sum of 4 complementary error functions. A high diffusivity for the fastest component at 20C indicated that, when I was diffused from the vapor, it was not a suitable long-term stable dopant in devices which required sharp junctions.

E.D.Jones, J.Malzbender, N.Shaw, P.Capper, J.B.Mullin: Journal of Electronic Materials, 1995, 24[9], 1225-9