The 1/f noise was measured in long-wavelength diodes as a function of the device geometry, band-gap, temperature, diode bias, and annealing temperature of a Te-rich CdTe passivation layer. The results showed that, for these diodes, the 1/f noise was a bulk phenomenon due to the modulation of generation recombination currents which were associated with defects that were formed by the interdiffusion of Te-rich CdTe, and that these defects were located in the junction region. No 1/f noise was observed in the case of the lowest interdiffusion annealing temperature.

R.Schiebel, D.Bartholomew, M.Bevan, R.S.List, M.Ohlson: Journal of Electronic Materials, 1995, 24[9], 1299-303