The Lang reflection X-ray topographic method was used to study the sub-grain structure of Hg0.8Cd0.2Te after annealing under various conditions. The dislocation density was studied, in chemically etched samples, by means of optical and scanning electron microscopy. Ingots were grown by using the Bridgman method, and the dislocation density of wafer samples after annealing (610C, 240h) was 108/cm2. Wafer samples which had been annealed at 650C for 720h had a dislocation density of 106/cm2.

I.Nöllmann, A.B.Trigubo, N.E.Walsöe de Reca: Japanese Journal of Applied Physics, 1991, 30[8], 1787-91