Layers of Hg1-xCdxTe, where x was equal to 0.2 or 0.3, were grown onto CdTe buffer layers that were over 2 off (001) and towards [110]GaAs by means of metalorganic vapor-phase epitaxy. Liquid-phase epitaxial deposition onto (111)B Cd0.96Zn0.04Te was also used. The specimens were then examined by means of atomic force microscopy. It was found that the liquid-phase epitaxial material was microscopically smooth, with growth spirals that were centered on screw dislocations. Uniform, but microscopically rough, buffers gave rise to material with faceted hillocks. Microscopically smooth buffers, with valleys and fissures, gave rise to hillock-free material. It was suggested that buffer layers in which defective areas grew at the same rate as their surroundings (because no particular growth facet was favored) produced microscopic roughness and hillocks in (Cd,Hg)Te. When defective areas were suppressed, valleys with fissures were present but led to good (Cd,Hg)Te growth.

A.Wasenczuk, A.F.W.Willoughby, P.Mackett, E.O’Keefe, P.Capper, C.D.Maxey: Journal of Crystal Growth, 1996, 159, 1090-5