Molecular beam epitaxy was used to prepare (111)B or (112)B films. They were examined by using optical and transmission electron microscopy. The formation of micro-twins and dislocations in the films was observed. The films also contained complicated defects. The interaction of partial dislocations in the twinning plane resulted in the creation of threading dislocations. The existence of an elemental Te phase was possible during the preparation of Hg0.8Cd0.2Te films by molecular beam epitaxy. This, together with twinning, led to the avalanche-type multiplication of structural defects.

I.V.Sabinina, A.K.Gutakovsky, J.G.Sidorov, S.A.Dvoretsky, V.D.Kuzmin: Journal of Crystal Growth, 1992, 117, 238-43