The characteristics and properties of this material were reviewed. The features which were considered included dislocations at interfaces, residual donors, surface segregation and passivation, concentration fluctuations, native defects, formation enthalpies and entropies and self-diffusion parameters. First-principles calculations predicted that the main native defects which would be found in samples that had been equilibrated at low Hg pressures were Hg vacancies, while the defects in samples which had been equilibrated at high Hg pressures were likely to be Hg interstitials and Hg antisite defects.

A.Sher, M.A.Berding, M.Van Schilfgaarde, A.B.Chen: Semiconductor Science and Technology, 1991, 6[12], C59-70