The transition from point defects (frozen into Hg0.76Cd0.24Te which had been ion-implanted at low temperatures) to extended defects was monitored at temperatures of between 100 and 360K by using ion channelling. It was found that the transition exhibited time and temperature dependences which were characteristic of diffusion processes with exceptionally small parameters. The extended defects which were formed by the agglomeration of frozen-in point defects were found to correspond to the depths of the implants. In contrast, defects which were created by room-temperature implantation extended to much greater depths. The diffusion which appeared to mediate damage evolution was estimated (figure 7) and was found to be described by:

D (cm2/s) = 4.2 x 10-10exp[-0.25(eV)/kT]

V.Richter, R.Kalish: Journal of Applied Physics, 1990, 67[10], 6578-80

Figure 7

Diffusivity Associated with Implantation Damage in CdHgTe