The effect of various substrates upon deep levels was investigated by means of deep-level transient spectroscopy. Here, (Cd,Zn)Te (which had almost the same lattice constant and thermal expansion coefficient as (Cd,Hg)Te) and Si (which had a larger lattice constant and thermal expansion coefficient than (Cd,Hg)Te) were used as substrates. The results showed that there were 6 levels between 0.027eV and 0.056eV as activation energies in (Cd,Hg)Te which had been grown on a Si substrate, while there were 6 levels between 0.01eV and 0.044eV as activation energies in (Cd,Hg)Te which had been grown on the (Cd,Zn)Te substrate. It was confirmed that samples which had been grown onto Si had deeper levels than samples which had been grown onto (Cd,Zn)Te.

J.Yoshino, J.Morimoto, H.Wada: Japanese Journal of Applied Physics - 1, 1998, 37[7], 4032-6