Defects in ion-implanted Hg0.78Cd0.22Te were studied by using mono-energetic positron beams. Vacancy-type defects which were introduced by B+-implantation were identified as open spaces that were associated with extended defects such as dislocation loops and stacking faults. In Ar+-implanted specimens, the mean size of the open volume of defects in the damaged region was estimated to be that of a divacancy. An observed difference between the defect species in B+- and Ar+-implanted specimens was attributed to the suppression of recombination between vacancies and interstitials in damaged regions which were introduced by Ar+-implantation. The annealing temperature of the vacancy-type defects that were introduced by Ar+-implantation was found to be 300C.

A.Uedono, H.Ebe, M.Tanaka, R.Suzuki, T.Ohdaira, S.Tanigawa, T.Mikado, K.Yamamoto, Y.Miyamoto: Japanese Journal of Applied Physics - 1, 1998, 37[7], 3910-4