The growth of  in situ  As-doped material via molecular beam epitaxy and As activation at 250C was reported. Elemental As was used as the p-type dopant source. Activation of As was observed at 1016 to 1018/cm3, after low-temperature annealing at 250C. It was observed that the As activation efficiency decreased at doping levels above 5 x 1018/cm3. It was suggested that self-compensation and the formation of neutral As complexes could limit doping efficiency at very high levels. An acceptor activation energy of 0.0054eV was deduced on the basis of the dependence of the Hall coefficient upon temperature. This value was attributed to singly ionized As, which was located on a Te site (AsTe•), acting as an acceptor.

M.Zandian, A.C.Chen, D.D.Edwall, J.G.Pasko, J.M.Arias: Applied Physics Letters, 1997, 71[19], 2815-7