An improved analytical model was developed for the calculation of the junction depth and Hg interstitial profile during n-on-p junction formation in vacancy-doped material. This model took account of Hg interstitials in the p-type vacancy-rich region. It could be used to calculate the junction depth during both the initial reaction-limited regime of junction formation, and during the diffusion-limited regime. It could also be used to calculate the junction depth under conditions where the abrupt-junction approximation of simpler models failed. The improved model could be used to determine the limits of the annealing conditions and times for which the analytically calculated junction depth was valid. The decay length of interstitials into the p-type region, as estimated analytically, placed an upper bound on the grid spacing which was required to resolve the junction accurately in numerical simulations.

S.Holander-Gleixner, H.G.Robinson, C.R.Helms: Journal of Applied Physics, 1998, 83[3], 1299-304