Radiation defect formation was studied in Hg0.7Cd0.3Te crystals which had been irradiated with 10MeV protons, at room temperature, to doses of up to 1015/cm2. The distribution profiles of the electrically active defects were obtained, and vacancy defects were studied by means of positron annihilation.

A.V.Voitsekhovskii, A.G.Korotaev, A.P.Kokhanenko: Fizika i Tekhnika Poluprovodnikov, 1996, 30[9], 1565-9 (Semiconductors, 1996, 30[9], 821-2)