A study was made of minority-carrier lifetimes in intentionally In-doped (211)B molecular beam epitaxially grown Hg1-xCdxTe epilayers, where x was approximately equal to 0.23, at temperatures down to 80K. The measured lifetimes were explained in terms of an Auger-limited band-to-band recombination process; even in the extrinsic temperature region. The layers exhibited electron mobilities which were as high as 2 x 105cm2/Vs at low temperatures. When the layers were compensated with Hg vacancies, the results showed that the Shockley-Read recombination process became important, as well as band-to-band processes. It was deduced from the data that the obtained defect level was acceptor-like and was somehow related to the Hg vacancies.

P.S.Wijewarnasuriya, M.D.Lange, S.Sivananthan, J.P.Faurie: Journal of Electronic Materials, 1995, 24[5], 545-9