This representative of II-VI compound semiconductors was investigated in order to study the predominant vacancies on metal sites. The specific positron trapping rate was estimated to be 9 x 1014/s. The vacancy distribution was determined 3-dimensionally in monocrystals after cutting them into wafers. The iso-concentration lines of Hg vacancies in the existence area of the phase diagram were determined, and the kinetics of Hg in-diffusion during annealing under a given Hg vapor pressure were also studied.

R.Krause, M.Neubert, T.Drost, W.Hörstel, A.Polity, F.M.Kiessling, U.Paitz, V.Zlomanov, S.Mäkinen: Materials Science Forum, 1992, 105-110, 333-40