Samples of the II-VI semiconductor were studied by using a low-energy positron beam. Differences in the variation of the Doppler line-shape parameter, as a function of positron implantation energy, were observed in annealed and as-grown samples. A diffusion model analysis of the results revealed large changes in the defect concentration of the bulk, due to annealing. This change was attributed to differences in the Hg vacancy concentration of the samples.

C.Smith, P.Rice-Evans, N.Shaw, D.L.Smith: Philosophical Magazine Letters, 1993, 67[3], 213-7