The depth distribution of donor defects, after implantation with various ions, was investigated. It was found that the main factor which governed the saturation of the dose-dependence was the neutralization of donor defects by extended damage to the crystal structure. It was deduced that the first point defects, which were created during ion implantation within the projected ion range, were either annihilated or took part in the formation of further defects. The formation of donor defects saturated at a concentration of 2 x 1018/cm3. Some of the excess of initial point defects did not take part in the creation of donor defects within the projected ion range, but instead migrated out of this volume to create donor defects. Some of these initial defects remained within the projected ion range and agglomerated into extended crystal damage, or took part in ion-induced surface evaporation.

K.V.Shastov: Physica Status Solidi A, 1992, 130[2], 293-303