The electrical properties of n-type Hg1-xCdxTe liquid-phase epitaxial layers were analyzed in terms of electron and impurity band conduction. In material with a low concentration of compensating acceptors (less than 0.45), the usual electron conduction occurred. The electron mobility was limited by impurity scattering and lattice scattering in the low-temperature and high-temperature regimes, respectively. Highly compensated (better than 0.88) n-type layers exhibited an additional impurity band conduction. From comparative investigations of n-type and p-type annealed layers, it was seen that the impurity band was formed of approximately empty donors states on the conduction band edge. A low occupation of donor states was caused by a high concentration of compensating acceptors.

W.Hoerstel, A.Klimakov, R.Kramer, A.Schmiede: Physica Status Solidi A, 1990, 119[2], 589-94