The damage which was introduced by In implantation of Hg1-xCdxTe samples with x-values of 0, 0.24, 0.40, 0.70 or 1 was determined by using channelling Rutherford back-scattering spectrometry. In spite of a large difference in the nature of the bonding for the various compositions, the same general trends in damage formation were found for all of the x-values, although they were displaced by about 2 orders of magnitude with regard to the dose. Thus, it was much easier to damage HgTe than CdTe. For all of the compositions, different types of damage appeared to be created at different stages of the implantation. The results could be explained by assuming that the agglomeration of point defects to extended defects was followed by a redistribution of the defects to deeper-lying clusters with increasing dose.

C.Uzan-Saguy, D.Comedi, V.Richter, R.Kalish, R.Triboulet: Journal of Vacuum Science and Technology A, 1989, 7[4], 2575-9