Crystals were implanted with 200 or 500keV H+ ions and 50 or 150keV Ar+ ions. The resultant lattice damage was studied by means of electrical measurements and Rutherford back-scattering spectrometry. It was suggested that the main factors which governed the spatial distribution of the electron concentration were the diffusion of Hg atoms from the region of maximum defect creation, and the formation of extended defects during ion implantation.

J.V.Lilenko, K.V.Shastov, A.S.Petrov, A.V.Voitsekhovskii, V.S.Kulikauskas, N.V.Kuznetsov, A.P.Mamontov: Physica Status Solidi A, 1989, 113[2], 285-94