The point defect concentrations in samples which had been annealed at various temperatures were deduced from precision lattice parameter measurements by using a simple continuum inclusion model, and were compared with the densities of electrically charged defects that had been determined by means of high-temperature Hall and conductivity measurements. It was found that non-stoichiometry was accounted for by cation vacancies. Depending upon the CdTe content, the ratio of total to charged defect concentrations ranged from unity, for HgTe-rich compositions, to 75 for CdTe. It was concluded that it was necessary to distinguish between electrical and chemical stability regions.

H.Berger: Crystal Research and Technology, 1993, 28[6], 795-801