The deep levels of In and self-interstitials in tetrahedral and hexagonal positions were characterized, and energy trends were calculated by using the defect-molecule approach. This method was extended so as to include metallic and polar (as well as covalent) coupling. The possibility of self-compensation due to interstitials was considered.

S.Goettig, C.G.Morgan-Pond: Journal of Vacuum Science and Technology A, 1988, 6[4], 2670-4