Twinning defects, in molecular beam epitaxial films which had been grown onto (100) or (111) surfaces, were investigated. It was found that, by closely controlling the Hg over-pressure and the substrate temperature during photo-assisted molecular beam epitaxial layer growth, the number of twin defects could be reduced. In particular, pyramidal hillocks and facets on (100) surfaces were reduced to a density of 10000/cm2. In-plane twin domains were eliminated from (111)B films which had been grown under stringent conditions. A new approach was suggested which involved the growth of thin epilayers that were periodically spaced throughout a (Cd,Hg)Te matrix, followed by an interdiffusion step. The films which were grown by using this technique exhibited an absence of laminar twin defects.

K.A.Harris, T.H.Myers, R.W.Yanka, L.M.Mohnkern, R.W.Green, N.Otsuka: Journal of Vacuum Science and Technology A, 1990, 8[2], 1013-9