It was reported that rotation twins as well as reflection twins formed easily in samples which were grown, using molecular beam epitaxial techniques, in the (111) orientation. Twinning could be avoided by carefully controlling substrate preparation and by closely controlling growth conditions such as the stability of the Hg pressure and the surface temperature of the substrate; which were difficult to control when the substrate was rotated. A comparison of twinned layers and twin-free layers showed that electrically active acceptors and a high hole mobility were associated with the presence of reflection twins and/or Hg-rich alloy zones; due to a Hg overpressure during growth. Twin-free (Cd,Hg)Te layers could exhibit an etch pit density which was 2 orders of magnitude lower than that of twinned layers.

J.P.Faurie, R.Sporken, S.Sivananthan, M.D.Lange: Journal of Crystal Growth, 1991, 111[1-4], 698-710