A detailed study was made of the p-type doping of Te-based compounds during molecular beam epitaxy, using N atoms which were produced by a direct-current glow plasma source. The samples were characterized by using capacitance-voltage, Hall effect, low-temperature reflectivity and luminescence, double-crystal X-ray diffraction, nuclear reaction analysis and secondary ion mass spectroscopy. It was found that doping introduced shallow hydrogenic acceptors, NTe.

T.Baron, K.Saminadayar, N.Magnea: Journal of Applied Physics, 1998, 83[3], 1354-70