An investigation was made of deep levels, in bulk Ga-doped Cd0.95Mn0.05Te mixed crystals, by using deep-level transient spectroscopy. Four electron traps were found, with activation energies of 0.26, 0.53, 0.55 and 0.83eV. For the first 2 traps, the electron capture processes were found to be thermally activated; with capture barriers of 0.15 and 0.23eV, respectively.

J.Szatkowski, E.Placzek-Popko, K.Sieranski, B.Bieg: Journal of Crystal Growth, 1999, 197[3], 684-7