Electrical transport, far-infrared absorption, deep-level transient spectroscopic and magnetization studies were made of the photo-memory effect in n-type crystals which were doped with In and Ga. The results could be explained by assuming that the In and Ga atoms formed DX-like centers in these diluted magnetic semiconductors. It was found that the magnetization data were consistent with the negative-U model for In-based DX-like centers.

T.Wojtowicz, G.Karczewski, N.G.Semaltianos, S.Kolesnik, I.Miotkowski, M.Dobrowolska, J.K.Furdyna: Materials Science Forum, 1994, 143-147, 1203-8