Capacitance spectroscopy and photoconductivity methods were used to investigate electron states which were due to dislocations. It was found that the defects which accompanied growth dislocations, as well as those which were generated by plastic deformation, had metastable characteristics. Depending upon the conditions which existed during the initial filling of levels, 2 alternative electron states could appear. They differed with regard to their thermal and optical ionization energies.

O.F.Vyvenko, A.A.Istratov, A.G.Khlebov: Fizika i Tekhnika Poluprovodnikov, 1990, 24[9], 1650-8. (Soviet Physics - Semiconductors, 1990, 24[9], 1030-4)