A new method was proposed for the separate investigation of the properties of screw and edge dislocations, in II-VI semiconductors, by means of space charge region spectroscopy. This involved making measurements of Schottky contacts which were either evaporated onto the surface immediately after indentation or after the removal of a suitably chosen surface layer. The method was based upon a model, for the dislocation structure near to microhardness indentations, which assumed that the relationship between the length of the edge and screw segments in dislocation half-loops was defined by their relative mobilities. Scanning electron microscopy cathodoluminescence and deep-level transient spectroscopic measurements of CdS confirmed the validity of the present model.

O.F.Vyvenko, A.A.Istratov: Physica Status Solidi A, 1993, 138[2], 715-21