In order to obtain more information on the doping behavior of II-VI semiconductors, positron annihilation spectroscopy experiments were carried out on heavily In-doped and Li-doped crystals. A correlation was found to exist between the concentration of In atoms on unperturbed substitutional Cd sites and the concentration of electrical carriers. The incorporation of Li was investigated as a function of the crystal temperature and Li vapor pressure. The increase in the InM-VM fraction was governed by the temperature of the Li source. This behavior was explained by assuming that the incorporation of Li was determined by the external vapor pressure of Li. It was noted that the fraction of In probe atoms which formed an InM-VM pair attained levels of more than 80%.

H.Wolf, U.Hornauer, R.Lermen, Y.Endalamaw, T.Filz, T.Krings, S.Lauer, U.Ott, E.Singer, M.Tsige, T.Wichert: Materials Science Forum, 1994, 143-147, 391-6